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description the AUIRF7739L2tr(1) combines the latest automotive hexfet? power mosfet silicon technology with the advanced directfet ? packaging to achieve the lowest on-state resistance in a package that has the footprint of a dpak (to-252aa) and only 0.7 mm profile. the directfet package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection soldering techniq ues, when application note an- 1035 is followed regarding the manufacturing methods and processes. the directfet package allows dual sided cooling to maximize thermal transfer in automo- tive power systems. this hexfet power mosfet is designed for applications where efficiency and power density are essential. the advanced directfet ? packaging platform coupled with the latest silicon technology allows the AUIRF7739L2tr(1) to offer substantial system level savings and performanc e improvement specifically in motor drive, high frequency dc-dc and other heavy load applications on ice, hev and ev platforms. this mosfet utilizes the latest processing techniques to achieve low on-resistance and low qg per silicon area. additional features of this mosfet are 175c operating junction temperat ure and high repetitive peak current capability. these features combine to make this mosfet a highly efficient, robust and reliable device for high current automotive applications. www.irf.com 1 12/01/2010 AUIRF7739L2tr AUIRF7739L2tr1 applicable directfet ? outline and substrate outline automotive directfet power mosfet automotive grade directfet isometric hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ features?
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? ,- sb sc m2 m4 l4 l6 l8 v (br)dss 40v r ds(on) typ. 700 max. 1000 i d (silicon limited) 270a q g 220nc absolute maximum ratings stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress rati ngs only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) a i d @ t a = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c power dissipation p d @t a = 25c power dissipation e as single pulse avalanche energy (thermally limited) mj e as (tested) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t p peak soldering temperature t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient CCC 40 r ja junction-to-ambient 12.5 CCC r ja junction-to-ambient 20 CCC c/w r jcan junction-to-can CCC 1.2 r j-pcb junction-to-pcb mounted CCC 0.5 linear derating factor w/c max. 270 190 1070 160 270 see fig.12a, 12b, 15, 16 40 w 3.8 270 c -55 to + 175 20 375 0.83 46 125 .'//01 downloaded from: http:///

2 www.irf.com surface mounted on 1 in. square cu (still air).
with small clip heatsink (still air) mounted on minimum footprint full size board with metalized back and with smallclip heatsink (still air) notes through are on page 10 static characteristics @ t j = 25c (unless otherwise stated) parameter min. t y p. max. units v (br)dss drain-to-source breakdown volta g e 40 CCC CCC v ? v (br)dss / ? t j breakdown volta g e temp. coefficient CCC 0.008 CCC v/c r ds(on) static drain-to-source on-resistance CCC 700 1000 v gs(th) gate threshold volta g e 2.0 2.8 4.0 v ? v gs(th) / ? t j gate threshold voltage coefficient CCC -6.7 CCC mv/c gfs forward transconductance 280 CCC CCC s r g gate resistance CCC 1.5 CCC i dss drain-to-source leaka g e current CCC CCC 5.0 a CCC CCC 250 i gss gate-to-source forward leaka g e CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 dynamic characteristics @ t j = 25c (unless otherwise stated) parameter min. t y p. max. units q g total gate char g e CCC 220 330 q gs1 pre-vth gate-to-source charge CCC 46 CCC q gs2 post-vth gate-to-source charge CCC 19 CCC nc see fig. 11 q gd gate-to-drain ("miller") char g e CCC 81 CCC q godr gate charge overdrive CCC 74 CCC q sw switch charge (q gs2 + q gd ) CCC 100 CCC q oss output charge CCC 83 CCC nc t d(on) turn-on dela y time CCC 21 CCC t r rise time CCC 71 CCC ns t d(off) turn-off dela y time CCC 56 CCC t f fall time CCC 42 CCC c iss input capacitance CCC 11880 CCC c oss output capacitance CCC 2510 CCC c rss reverse transfer capacitance CCC 1240 CCC pf c oss output capacitance CCC 8610 CCC c oss output capacitance CCC 2230 CCC c oss eff. effective output capacitance CCC 3040 CCC diode characteristics @ t j = 25c (unless otherwise stated) parameter min. typ. max. units i s continuous source current CCC CCC 110 (body diode) a i sm pulsed source current CCC CCC 1070 (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 87 130 ns q rr reverse recovery charge CCC 250 380 nc i f = 160a, v dd = 20v di/dt = 100a/s i s = 160a, v gs = 0v i d = 160a v ds = 16v, v gs = 0v v dd = 20v, v gs = 10v i d = 160a r g = 1.8 ? = 1.0mhz v gs = 0v, v ds = 0v to 32v na conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 160a v ds = v gs , i d = 250a v ds = 40v, v gs = 0v v ds = 40v, v gs = 0v, t j = 125c v gs = -20v v ds = 10v, i d = 160a showing the integral reverse v ds = 20v, v gs = 10v v gs = 20v v gs = 0v, v ds = 1.0v, f=1.0mhz v gs = 0v, v ds = 32v, f=1.0mhz conditions p-n junction diode. mosfet symbol conditions v gs = 0v v ds = 25v downloaded from: http:///

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8 qualification information ? dfet2 msl1 rohs compliant yes esd machine model class m4 (800v) aec-q101-002 human body model class h3a (7000v) aec-q101-001 charged device model n/a aec-q101-005 moisture sensitivity level qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. downloaded from: http:///

4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical on-resistance vs. gate voltage fig 4. typical on-resistance vs. drain current fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 60s pulse width tj = 25c 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 160a v gs = 10v 2 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v 60s pulse width 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v gs, gate -to -source voltage (v) 0 2 4 6 8 10 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 160a t j = 125c t j = 25c 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 60s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0 40 80 120 160 200 i d , drain current (a) 0.85 0.86 0.87 0.88 0.89 0.90 0.91 0.92 0.93 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) v gs = 10v downloaded from: http:///

www.irf.com 5 fig 7. typical threshold voltage vs. junction temperature fig 8. typical source-drain diode forward voltage fig 9. typical forward transconductance vs. drain current fig 10. typical capacitance vs.drain-to-source voltage fig.11 typical gate charge vs.gate-to-source voltage fig 12. maximum drain current vs. case temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0 25 50 75 100 125 150 i d ,drain-to-source current (a) 0 25 50 75 100 125 150 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v 20s pulse width 1 10 100 v ds , drain-to-source voltage (v) 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 50 100 150 200 250 300 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v i d = 160a 25 50 75 100 125 150 175 t c , case temperature (c) 0 50 100 150 200 250 300 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 175 200 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a i d = 1.0ma i d = 1.0a downloaded from: http:///

6 www.irf.com fig 14. maximum avalanche energy vs. temperature fig 13. maximum safe operating area fig 15. maximum effective transient thermal impedance, junction-to-case fig 16. typical avalanche current vs.pulsewidth 0 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 175c single pulse 100sec 1msec 10msec dc 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 800 900 1000 1100 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 29a 46a bottom 160a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.1080 0.0001710.6140 0.053914 0.4520 0.006099 1.47e-05 0.036168 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) downloaded from: http:///

www.irf.com 7 fig 17. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 13, 14:(for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type.2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 16a, 16b. 4. p d (ave) = average power dissipation per single avalanche pulse.5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 19a. gate charge test circuit fig 19b. gate charge waveform v ds 90%10% v gs t d(on) t r t d(off) t f
1 0.1 % + - fig 20a. switching time test circuit fig 20b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s 20k 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 300 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cy cle i d = 160a downloaded from: http:///

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please see an-1035 for directfet ? assembly details and stencil and substrate design recommendations g = gate d = drain s = source dd d d dd ss s s g ssss note: for the most current drawing please refer to ir website at http://www .irf.com/package fig 21. *
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? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period ---
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! please see an-1035 for directfet ? assembly details and stencil and substrate design recommendations automotive directfet part marking note: for the most current drawing please refer to ir website at http://www .irf.com/package downloaded from: http:///

10 www.irf.com automotive directfet tape & reel dimension (showing component orientation). note: for the most current drawing please refer to ir website at http://www .irf.com/package click on this section to link to the appropriate technical paper. click on this section to link to the directfet ? website. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. repetitive rating; pulse width limited by max. junction temperature. " # starting t j = 25c, l = 0.021mh, r g = 25 , i as = 160a. pulse width 400s; duty cycle 2%. used double sided cooling, mounting pad with large heatsink. mounted on minimum footprint full size board with metalized back and with small clip heatsink.
r is measured at t j of approximately 90c. downloaded from: http:///

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unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to irs terms and condi- tions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with irs s tandard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design an d operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the b ody, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized app lication, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of per sonal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manu- facture of the product. ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifi- cally designated by ir as military-grade or enhanced plastic. only products designated by ir as military-grade meet military specifica- tions. buyers acknowledge and agree that any such use of ir products which ir has not designated as military-grade is solely at the buyers risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such us e. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are desig- nated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation au. buyers acknowle dge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact irs technical assistance center http://www .irf.com/technical-info/ world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:///

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